Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG
Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG
About this item
Full title
Author / Creator
Liu, Botao , Yu, Yue , Tang, Xia and Gao, Bing
Publisher
Basel: MDPI AG
Journal title
Language
English
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Publication information
Publisher
Basel: MDPI AG
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Scope and Contents
Contents
The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we p...
Alternative Titles
Full title
Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG
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Author / Creator
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Record Identifier
TN_cdi_proquest_journals_2535267114
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2535267114
Other Identifiers
ISSN
2073-4352
E-ISSN
2073-4352
DOI
10.3390/cryst9120653
