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Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field...

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2564400484

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

About this item

Full title

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

Publisher

Bristol: IOP Publishing

Journal title

IOP conference series. Materials Science and Engineering, 2017-10, Vol.256 (1), p.12005

Language

English

Formats

Publication information

Publisher

Bristol: IOP Publishing

More information

Scope and Contents

Contents

The spatial distribution of the photocurrent in the input window plane of a GaAs-based p-i-n photodiode with embedded self-assembled InAs quantum dots (QDs) has been studied with the photoexcitation through a Scanning Near-field Optical Microscope (SNOM) probe at the emission wavelength greater than the intrinsic absorption edge of the host materia...

Alternative Titles

Full title

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2564400484

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2564400484

Other Identifiers

ISSN

1757-8981

E-ISSN

1757-899X

DOI

10.1088/1757-899X/256/1/012005

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