GaAs diode structures with n+-p junction on Ge/Si templates
GaAs diode structures with n+-p junction on Ge/Si templates
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Publisher
Bristol: IOP Publishing
Journal title
Language
English
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Publisher
Bristol: IOP Publishing
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Scope and Contents
Contents
GaAs layers were grown by metalorganic epitaxy on Ge/Si(001) substrates, which were formed by chemical vapor deposition with decomposition of GeH4 on a hot wire. High structural quality of thin Ge layers (0.2 - 0.3 μm) on a silicon substrate made it possible to grow high-quality GaAs layers. The resulting n+-GaAs/p-GaAs/p-Ge/p+-Si diode structures...
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Full title
GaAs diode structures with n+-p junction on Ge/Si templates
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TN_cdi_proquest_journals_2569663258
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2569663258
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ISSN
1742-6588
E-ISSN
1742-6596
DOI
10.1088/1742-6596/1482/1/012034
