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Relative magnetoresistance in polycrystalline In-Cu chalcogenides under high pressure up to 50 GPa

Relative magnetoresistance in polycrystalline In-Cu chalcogenides under high pressure up to 50 GPa

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2571938731

Relative magnetoresistance in polycrystalline In-Cu chalcogenides under high pressure up to 50 GPa

About this item

Full title

Relative magnetoresistance in polycrystalline In-Cu chalcogenides under high pressure up to 50 GPa

Publisher

Bristol: IOP Publishing

Journal title

Journal of physics. Conference series, 2018-01, Vol.946 (1), p.12088

Language

English

Formats

Publication information

Publisher

Bristol: IOP Publishing

More information

Scope and Contents

Contents

This paper is devoted to the investigation of relative magnetoresistance MR in semiconductor polycrystalline materials: CuInAsS3, CuInAsSe3, CuInS2 and CuInSe2 under high pressures up to 50 GPa and at a constant transverse magnetic field. The pressure ranges of significant changes in the behavior of electrical resistance and magnetoresistance were...

Alternative Titles

Full title

Relative magnetoresistance in polycrystalline In-Cu chalcogenides under high pressure up to 50 GPa

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2571938731

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2571938731

Other Identifiers

ISSN

1742-6588

E-ISSN

1742-6596

DOI

10.1088/1742-6596/946/1/012088

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