A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabric...
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
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Basel: MDPI AG
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English
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Basel: MDPI AG
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GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progr...
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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
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TN_cdi_proquest_journals_2582801063
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2582801063
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ISSN
2079-9292
E-ISSN
2079-9292
DOI
10.3390/electronics7120377
