Fabrication and characterization of Schottky barrier diodes on rutile TiO2
Fabrication and characterization of Schottky barrier diodes on rutile TiO2
About this item
Full title
Author / Creator
Publisher
Bristol: IOP Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Bristol: IOP Publishing
Subjects
More information
Scope and Contents
Contents
Schottky barrier diodes (SBDs) were fabricated by depositing Pd, Pt or Ni on single crystal, conductive n-type rutile TiO2 using e-beam evaporation. As-grown and nominally undoped rutile TiO2 single crystals are semi-insulating, and were heat-treated in forming gas flow, N2 flow or H2 gas to obtain conductive n-type crystals displaying electrical c...
Alternative Titles
Full title
Fabrication and characterization of Schottky barrier diodes on rutile TiO2
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_2583430240
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2583430240
Other Identifiers
E-ISSN
2053-1591
DOI
10.1088/2053-1591/ab9777
