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Significant reduction in semiconductor interface resistance via interfacial atomic mixing

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2615378489

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

About this item

Full title

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

Publisher

Ithaca: Cornell University Library, arXiv.org

Journal title

arXiv.org, 2022-05

Language

English

Formats

Publication information

Publisher

Ithaca: Cornell University Library, arXiv.org

More information

Scope and Contents

Contents

The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such interfaces is difficult, limiting the understanding of interfacial charge transport. This work employs Green's function...

Alternative Titles

Full title

Significant reduction in semiconductor interface resistance via interfacial atomic mixing

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2615378489

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2615378489

Other Identifiers

E-ISSN

2331-8422

DOI

10.48550/arxiv.2112.14400

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