Optimisation of processing conditions during CVD growth of 2D WS2 films from a chloride precursor
Optimisation of processing conditions during CVD growth of 2D WS2 films from a chloride precursor
About this item
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Author / Creator
Publisher
New York: Springer US
Journal title
Language
English
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Publisher
New York: Springer US
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Scope and Contents
Contents
Monolayer tungsten disulphide (WS
2
) is a direct band gap semiconductor which holds promise for a wide range of optoelectronic applications. The large-area growth of WS
2
has previously been successfully achieved using a W(CO)
6
precursor, however, this is flammable and a potent source of carbon monoxide (CO) upon decomposition....
Alternative Titles
Full title
Optimisation of processing conditions during CVD growth of 2D WS2 films from a chloride precursor
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TN_cdi_proquest_journals_2619058954
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2619058954
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ISSN
0022-2461
E-ISSN
1573-4803
DOI
10.1007/s10853-021-06708-1
