Mg-doping and free-hole properties of hot-wall MOCVD GaN
Mg-doping and free-hole properties of hot-wall MOCVD GaN
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (\(2.45\times{10}^{18}~cm^{-3}\) up to \(1.10\times{10}^{20}~cm^{-3}\)) and demonstrate...
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Mg-doping and free-hole properties of hot-wall MOCVD GaN
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TN_cdi_proquest_journals_2634669998
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2634669998
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E-ISSN
2331-8422
DOI
10.48550/arxiv.2202.13614
