Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
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Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
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Publisher
Moscow: Pleiades Publishing
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Contents
III–V/Ge/Si(001), III–V/Ge/SOI(001), and III–V/GaAs(001) heterostructures are fabricated and investigated. The Ge buffer layer for the III–V/Ge/Si structure is grown by vapor deposition onto a Si(001) substrate via the decomposition of monogermane on a “hot wire”. In the case of III–V/Ge/SOI, the Ge buffer layer is obtained on a SOI(001) substrate...
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Full title
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
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Record Identifier
TN_cdi_proquest_journals_2677010578
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2677010578
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782622010171
