Symmetry of ferroelectric switching and domain walls in hafnium dioxide
Symmetry of ferroelectric switching and domain walls in hafnium dioxide
About this item
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Author / Creator
Guo-Dong, Zhao , Liu, Xingen , Ren, Wei , Zhu, Xiaona and Yu, Shaofeng
Publisher
Ithaca: Cornell University Library, arXiv.org
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Language
English
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Publisher
Ithaca: Cornell University Library, arXiv.org
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Contents
Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing, due to its compatibility with the mainstream integrated circuit technology and the surprisingly enhanced ferroelectricity by reduced thickness. The FE switching dynamics is essential to the device performance,...
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Full title
Symmetry of ferroelectric switching and domain walls in hafnium dioxide
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TN_cdi_proquest_journals_2686415470
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2686415470
Other Identifiers
E-ISSN
2331-8422
DOI
10.48550/arxiv.2207.03171
