Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanot...
Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers
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Basel: MDPI AG
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English
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Basel: MDPI AG
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Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results in unusual gate leakage currents with high magnitudes that vary with applied voltages. In this paper, we report an improved structure for solution-processed SWCNT-based TFTs. The unusual gate leakag...
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Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers
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TN_cdi_proquest_journals_2739419333
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2739419333
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2079-9292
E-ISSN
2079-9292
DOI
10.3390/electronics11223719
