Log in to save to my catalogue

Interfacial S–O bond-modified Z-scheme charge transfer on SnIn4S8/In2O3 heterojunction for enhanced...

Interfacial S–O bond-modified Z-scheme charge transfer on SnIn4S8/In2O3 heterojunction for enhanced...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2784112839

Interfacial S–O bond-modified Z-scheme charge transfer on SnIn4S8/In2O3 heterojunction for enhanced photocatalytic activity

About this item

Full title

Interfacial S–O bond-modified Z-scheme charge transfer on SnIn4S8/In2O3 heterojunction for enhanced photocatalytic activity

Publisher

New York: Springer US

Journal title

Journal of materials science. Materials in electronics, 2023-03, Vol.34 (8), p.698, Article 698

Language

English

Formats

Publication information

Publisher

New York: Springer US

More information

Scope and Contents

Contents

Constructing high-quality charge transfer scheme to achieve a higher spatial carrier separation rate could be considered as a crucial but challenging work in semiconductor photocatalysis for environmental remediation. Herein, a Z-scheme SnIn
4
S
8
/In
2
O
3
heterojunction with interfacial S–O bond was synthesized via a hydro...

Alternative Titles

Full title

Interfacial S–O bond-modified Z-scheme charge transfer on SnIn4S8/In2O3 heterojunction for enhanced photocatalytic activity

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2784112839

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2784112839

Other Identifiers

ISSN

0957-4522

E-ISSN

1573-482X

DOI

10.1007/s10854-023-10143-0

How to access this item