Monocrystalline Si/\(\beta\)-Ga\(_2\)O\(_3\) p-n heterojunction diodes fabricated via grafting
Monocrystalline Si/\(\beta\)-Ga\(_2\)O\(_3\) p-n heterojunction diodes fabricated via grafting
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Gong, Jiarui , Kim, Donghyeok , Jang, Hokyung , Fikadu Alema , Wang, Qingxiao , Tien Khee Ng , Qiu, Shuoyang , Zhou, Jie , Su, Xin , Lin, Qinchen , Singh, Ranveer , Abbasi, Haris , Kelson Chabak , Jessen, Gregg , Cheung, Clincy , Gambin, Vincent , Pasayat, Shubhra S , Osinsky, Andrei , Boon , Ooi, S , Gupta, Chirag and Ma, Zhenqiang
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Ithaca: Cornell University Library, arXiv.org
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English
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Ithaca: Cornell University Library, arXiv.org
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The \(\beta\)-Ga\(_2\)O\(_3\) has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in \(\beta\)-Ga\(_2\)O\(_3\) has hindered the development of Ga\(_2\)O\(_3\)-based bipolar devices. The approach of p-n diodes forme...
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Monocrystalline Si/\(\beta\)-Ga\(_2\)O\(_3\) p-n heterojunction diodes fabricated via grafting
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TN_cdi_proquest_journals_2821113534
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2821113534
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2331-8422
