Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifie...
Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode
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Publisher
Heidelberg: Springer Nature B.V
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Language
English
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Publisher
Heidelberg: Springer Nature B.V
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Scope and Contents
Contents
Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are promising alternative 2D materials. However...
Alternative Titles
Full title
Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode
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Record Identifier
TN_cdi_proquest_journals_2821235008
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2821235008
Other Identifiers
ISSN
1931-7573
E-ISSN
1556-276X
DOI
10.1186/s11671-023-03855-z
