Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulat...
Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
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Berlin/Heidelberg: Springer Berlin Heidelberg
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English
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Berlin/Heidelberg: Springer Berlin Heidelberg
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The small signal model of MOSFET is a must for implementation of analog/digital circuits. The non-quasi-static (NQS) model is well known and provides accurate parameters for MOSFET. In the present work, extrinsic and intrinsic NQS model parameters were extracted for 20 nm Gate Stacked Junction-less Accumulation Mode (GSJAM) MOSFET using two-port ad...
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Full title
Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
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TN_cdi_proquest_journals_2918064259
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2918064259
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ISSN
0946-7076
E-ISSN
1432-1858
DOI
10.1007/s00542-023-05524-8
