Investigation of electronic structure, optical properties, map of electrostatic potential, and toxic...
Investigation of electronic structure, optical properties, map of electrostatic potential, and toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational and virtual screening
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New York: Springer US
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Language
English
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Publisher
New York: Springer US
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This research work presents a computational investigation of hafnium(IV) oxide and its crystals doped by Si, Ge and Sn atoms, replacing the oxygen atom in HfO
2
. Hafnium(IV) oxide, which has a wide band gap, has been used in power electronics applications as insulator for resistive random access memory (RRAM) in metal–oxide–semiconductor fie...
Alternative Titles
Full title
Investigation of electronic structure, optical properties, map of electrostatic potential, and toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational and virtual screening
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TN_cdi_proquest_journals_2918277623
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2918277623
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ISSN
1569-8025
E-ISSN
1572-8137
DOI
10.1007/s10825-022-01964-z
