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Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2921080718

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

About this item

Full title

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Publisher

Singapore: Springer Nature Singapore

Journal title

SN computer science, 2023-11, Vol.4 (6), p.786, Article 786

Language

English

Formats

Publication information

Publisher

Singapore: Springer Nature Singapore

More information

Scope and Contents

Contents

Gain cell embedded DRAM (GC-eDRAM) is a type of dynamic random access memory (DRAM) architecture that is widely used in embedded systems, such as microcontrollers, digital signal processors, and application-specific integrated circuits. In GC-eDRAM, the refresh operation is necessary to prevent data loss due to charge leakage from the memory cells....

Alternative Titles

Full title

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_proquest_journals_2921080718

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_2921080718

Other Identifiers

ISSN

2661-8907,2662-995X

E-ISSN

2661-8907

DOI

10.1007/s42979-023-02223-z

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