Numerical calculation of the probability of an electronic transition in a two-barrier heterostructur...
Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer
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Berlin/Heidelberg: Springer Berlin Heidelberg
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English
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Berlin/Heidelberg: Springer Berlin Heidelberg
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This paper presents the results of numerical calculations of the change in the probability of an electron passing through a two-barrier heterostructure depending on the thickness of a thin InAs nanolayer embedded between the barrier and the barrier (AlAs). Using these calculations, the half-thickness of the centre of the electronic energy level (Г)...
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Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer
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TN_cdi_proquest_journals_3047514260
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3047514260
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ISSN
1434-6028
E-ISSN
1434-6036
DOI
10.1140/epjb/s10051-024-00689-1