Temperature dependence of photoconductivity in layered semiconductor p-GaSe
Temperature dependence of photoconductivity in layered semiconductor p-GaSe
About this item
Full title
Author / Creator
Publisher
Berlin/Heidelberg: Springer Berlin Heidelberg
Journal title
Language
English
Formats
Publication information
Publisher
Berlin/Heidelberg: Springer Berlin Heidelberg
Subjects
More information
Scope and Contents
Contents
The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (
ρ
77
= 2·10
3
÷ 7·10
6
Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with
ρ
77
< 10
4
Ω cm, only the value of the p...
Alternative Titles
Full title
Temperature dependence of photoconductivity in layered semiconductor p-GaSe
Authors, Artists and Contributors
Author / Creator
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Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_3072275922
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3072275922
Other Identifiers
ISSN
1434-6028
E-ISSN
1434-6036
DOI
10.1140/epjb/s10051-024-00731-2
