Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks
Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks
About this item
Full title
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO
2
(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were relat...
Alternative Titles
Full title
Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_journals_3101543057
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3101543057
Other Identifiers
ISSN
1063-7842
E-ISSN
1090-6525
DOI
10.1134/S106378422402004X
