MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current
MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current
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Moscow: Pleiades Publishing
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Language
English
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Moscow: Pleiades Publishing
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Contents
The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of...
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Full title
MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current
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TN_cdi_proquest_journals_3106442377
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_3106442377
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ISSN
1063-7826
E-ISSN
1090-6479
DOI
10.1134/S1063782624050130
