Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser
Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser
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Publisher
Boston: Springer US
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Language
English
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Publisher
Boston: Springer US
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Contents
We report several cases of two photon absorption (TPA) laser assisted device alteration (LADA) using continuous wave (CW) 1,340 nm laser in Si Complimentary Metal-Oxide Semiconductor (CMOS) Integrated Circuits (IC). Two photon absorption using CW 1,340 nm laser in Si was confirmed by photon beam induced photocurrent measurements. TPA LADA showed gr...
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Full title
Two-photon absorption laser assisted device alteration using continuous wave 1,340 nm laser
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Record Identifier
TN_cdi_proquest_journals_890423642
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_journals_890423642
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ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-011-0458-y
