FET on hydrogenated diamond surface
FET on hydrogenated diamond surface
About this item
Full title
FET on hydrogenated diamond surface
Author / Creator
Publisher
Moscow: Pleiades Publishing
Journal title
Journal of communications technology & electronics, 2014-03, Vol.59 (3), p.282-287
Language
English
Formats
Publication information
Publisher
Moscow: Pleiades Publishing
Subjects
More information
Scope and Contents
Contents
It is demonstrated that a FET can be created on a hydrogenated diamond surface. A technology for production and properties of conducting hydrogenated diamond surface are considered. The technology is used to create a FET on the hydrogenated (110) surface of the 2A natural diamond.
Alternative Titles
Full title
FET on hydrogenated diamond surface
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1520966981
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1520966981
Other Identifiers
ISSN
1064-2269
E-ISSN
1555-6557
DOI
10.1134/S1064226914030061
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