Enhancement mode Al sub( 0.25)Ga sub( 0.75)As/ In sub( 0.2)Ga sub( 0.8)As nanowire HEMTs
Enhancement mode Al sub( 0.25)Ga sub( 0.75)As/ In sub( 0.2)Ga sub( 0.8)As nanowire HEMTs
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Author / Creator
Sohn, Y J , Lee, B H , Jeong, M Y and Jeong, Y H
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English
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Enhancement mode Al sub( 0.25)Ga sub( 0.75)As/In sub( 0.)2Ga sub( 0.8)As nanowire high electron mobility transistors (NW-HEMT) are fabricated successfully, by using selective wet etching and the depletion characteristic of a Schottky wrap gate. The devices exhibit very good modulation and saturation characteristics. For an NW-HEMT with an estimated...
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Full title
Enhancement mode Al sub( 0.25)Ga sub( 0.75)As/ In sub( 0.2)Ga sub( 0.8)As nanowire HEMTs
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TN_cdi_proquest_miscellaneous_1642208808
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1642208808
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ISSN
0013-5194
E-ISSN
1350-911X
