III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
About this item
Full title
Author / Creator
Publisher
Heidelberg: Tsinghua University Press
Journal title
Language
English
Formats
Publication information
Publisher
Heidelberg: Tsinghua University Press
Subjects
More information
Scope and Contents
Contents
Direct integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal-oxide-semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III–V segments are one of the most promising candidates for advanc...
Alternative Titles
Full title
III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1651375379
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1651375379
Other Identifiers
ISSN
1998-0124
E-ISSN
1998-0000
DOI
10.1007/s12274-014-0536-6
