Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-do...
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy
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Author / Creator
Fang, HeNan , Zhang, Rong , Liu, Bin , Li, YeCao , Fu, DeYi , Li, Yi , Xie, ZiLi , Zhuang, Zhe , Zheng, YouDou , Wu, JingBo , Jin, BiaoBing , Chen, Jian and Wu, PeiHeng
Publisher
Berlin/Heidelberg: Springer Berlin Heidelberg
Journal title
Language
English
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Publisher
Berlin/Heidelberg: Springer Berlin Heidelberg
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Scope and Contents
Contents
The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy. It is found that there are oscillations of the dielectric functions at various temperatures.Physically, the oscillation behavior is attributed to the resonance states of the point defects in the m...
Alternative Titles
Full title
Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy
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Record Identifier
TN_cdi_proquest_miscellaneous_1678021721
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1678021721
Other Identifiers
ISSN
1674-7348
E-ISSN
1869-1927
DOI
10.1007/s11433-013-5202-6
