Kinetics of thermally oxidation of Ge(100) surface
Kinetics of thermally oxidation of Ge(100) surface
About this item
Full title
Author / Creator
Sahari, S K , Ohta, A , Matsui, M , Mishima, K , Murakami, H , Higashi, S and Miyazaki, S
Publisher
Bristol: IOP Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Bristol: IOP Publishing
Subjects
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Scope and Contents
Contents
Thermal oxidation of a Ge(100) surface was investigated by using spectroscopic ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS). Ge oxide was grown in the temperature range of 375 to 550°C in dry-O2 ambience at atmospheric pressure. Although the Ge-oxide growth rate shows a linear relationship in a log-log plot at a fixed temperature, a...
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Full title
Kinetics of thermally oxidation of Ge(100) surface
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Author / Creator
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Record Identifier
TN_cdi_proquest_miscellaneous_1718924648
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1718924648
Other Identifiers
ISSN
1742-6596,1742-6588
E-ISSN
1742-6596
DOI
10.1088/1742-6596/417/1/012014
