Material characterization for advanced Si LSI process technology by means of positron annihilation
Material characterization for advanced Si LSI process technology by means of positron annihilation
About this item
Full title
Author / Creator
Uedono, A , Oshima, N , Ohdaira, T , Suzuki, R and Ishibashi, S
Publisher
Bristol: IOP Publishing
Journal title
Language
English
Formats
Publication information
Publisher
Bristol: IOP Publishing
Subjects
More information
Scope and Contents
Contents
Vacancy-type defects in gas cluster ion implanted Si and electroless deposited Cu were studied by monoenergetic positron beams. For Ar gas cluster ion implanted Si, we found that the vacancy-rich region was localized at a depth of 0–13 nm. Two different defect species were found to coexist in the damaged region, and they were identified as divacanc...
Alternative Titles
Full title
Material characterization for advanced Si LSI process technology by means of positron annihilation
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1753474754
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1753474754
Other Identifiers
ISSN
1742-6596,1742-6588
E-ISSN
1742-6596
DOI
10.1088/1742-6596/443/1/012067
