A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate diel...
A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer
About this item
Full title
Author / Creator
Publisher
Beijing: Tsinghua University Press
Journal title
Language
English
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Publication information
Publisher
Beijing: Tsinghua University Press
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Scope and Contents
Contents
Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic...
Alternative Titles
Full title
A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer
Authors, Artists and Contributors
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Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_1762089197
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1762089197
Other Identifiers
ISSN
1998-0124
E-ISSN
1998-0000
DOI
10.1007/s12274-015-0843-6
