Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
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Pfaffikon: Trans Tech Publications Ltd
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English
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Pfaffikon: Trans Tech Publications Ltd
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Long-term degradation of MOS devices has to be avoided in different harsh irradiated environments, especially for aerospace or military applications. In this paper, an overview of the irradiation experiments recently performed on 4H-SiC MOSFETs having an oxynitrided gate oxide is given, with a special focus on the threshold voltage and the effectiv...
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Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
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TN_cdi_proquest_miscellaneous_1793230280
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1793230280
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0255-5476,1662-9752
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1662-9752
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