Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si sub(2))...
Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si sub(2)) sub(1-x) (GaP) x (0 less than or equal to x less than or equal to 1) solution
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English
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The article concerns the growth of a hetero-epitaxial GaP layer on a silicon substrate via a buffer layer containing a continuous solid substitutional solution (Si sub(2)) sub(1-x) (GaP)x (0 less than or equal to x less than or equal to 1) from the liquid phase. Epitaxial films grown under 950-830 degree [ETH]! have n-type conductivity and specific...
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Full title
Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si sub(2)) sub(1-x) (GaP) x (0 less than or equal to x less than or equal to 1) solution
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TN_cdi_proquest_miscellaneous_1864541158
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_1864541158
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ISSN
0003-701X
E-ISSN
1934-9424
DOI
10.3103/S0003701X16030154
