Direct-bandgap emission from hexagonal Ge and SiGe alloys
Direct-bandgap emission from hexagonal Ge and SiGe alloys
About this item
Full title
Author / Creator
Fadaly, Elham M. T. , Dijkstra, Alain , Suckert, Jens Renè , Ziss, Dorian , van Tilburg, Marvin A. J. , Mao, Chenyang , Ren, Yizhen , van Lange, Victor T. , Korzun, Ksenia , Kölling, Sebastian , Verheijen, Marcel A. , Busse, David , Rödl, Claudia , Furthmüller, Jürgen , Bechstedt, Friedhelm , Stangl, Julian , Finley, Jonathan J. , Botti, Silvana , Haverkort, Jos E. M. and Bakkers, Erik P. A. M.
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. The goal
1
of achieving efficient light emission from group-IV material...
Alternative Titles
Full title
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Authors, Artists and Contributors
Author / Creator
Dijkstra, Alain
Suckert, Jens Renè
Ziss, Dorian
van Tilburg, Marvin A. J.
Mao, Chenyang
Ren, Yizhen
van Lange, Victor T.
Korzun, Ksenia
Kölling, Sebastian
Verheijen, Marcel A.
Busse, David
Rödl, Claudia
Furthmüller, Jürgen
Bechstedt, Friedhelm
Stangl, Julian
Finley, Jonathan J.
Botti, Silvana
Haverkort, Jos E. M.
Bakkers, Erik P. A. M.
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_2388004493
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_2388004493
Other Identifiers
ISSN
0028-0836
E-ISSN
1476-4687
DOI
10.1038/s41586-020-2150-y
