Band anticrossing in highly mismatched group II-VI semiconductor alloys
Band anticrossing in highly mismatched group II-VI semiconductor alloys
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Author / Creator
YU, K. M , WU, J , WALUKIEWICZ, W , BEEMAN, J. W , AGER, J. W , HALLER, E. E , MIOTKOWSKI, I and RAMDAS, A
Publisher
New York, NY: Institute of Electrical and Electronics Engineers
Journal title
Language
English
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Publisher
New York, NY: Institute of Electrical and Electronics Engineers
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Contents
We have successfully synthesized highly mismatched Cd^sub 1-y^Mn^sub y^O^sub x^Te^sub 1-x^ alloys by high-dose implantation of O ions into Cd^sub 1-y^Mn^sub y^Te crystals. In crystals with y>0.02, incorporation of O causes a large decrease in the bandgap. The bandgap reduction increases with y; the largest value observed is 190 meV in O^sup +^-impl...
Alternative Titles
Full title
Band anticrossing in highly mismatched group II-VI semiconductor alloys
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Record Identifier
TN_cdi_proquest_miscellaneous_26609791
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_26609791
Other Identifiers
ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-002-0232-2
