Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-[Form...
Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-[Formula: see text]
About this item
Full title
Author / Creator
Stellino, E , Capitani, F , Ripanti, F , Verseils, M , Petrillo, C , Dore, P and Postorino, P
Publisher
England
Journal title
Language
English
Formats
Publication information
Publisher
England
More information
Scope and Contents
Contents
High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-[Formula: see text], which reveals that the metallization...
Alternative Titles
Full title
Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-[Formula: see text]
Authors, Artists and Contributors
Author / Creator
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Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_2725190665
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_2725190665
Other Identifiers
E-ISSN
2045-2322
DOI
10.1038/s41598-022-22089-0
