Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase e...
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
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Warrendale: Springer Nature B.V
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English
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Warrendale: Springer Nature B.V
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Nonpolar (1100) m-plane gallium nitride has been grown heteroepitaxially on (100) γ-LiAlO^sub 2^ by several groups. Previous attempts to grow m-plane GaN by hydride vapor phase epitaxy (HVPE) yielded films unsuitable for subsequent device regrowth because of the high densities of faceted voids intersecting the films' free surfaces. We report here o...
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Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
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TN_cdi_proquest_miscellaneous_28559989
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_28559989
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ISSN
0361-5235
E-ISSN
1543-186X
DOI
10.1007/s11664-005-0110-9
