Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
About this item
Full title
Author / Creator
GAN, K.-J , TSAI, C.-S and SUN, W.-L
Publisher
London: Institution of Electrical Engineers
Journal title
Language
English
Formats
Publication information
Publisher
London: Institution of Electrical Engineers
Subjects
More information
Scope and Contents
Contents
A novel negative differential resistance (NDR) circuit made of a metal-oxide-semiconductor field-effect-transistor (MOS) and a heterojunction bipolar transistor (HBT) is presented. By suitably modulating the width/length parameters of the MOS devices, the fabrication of this MOS-HBT-NDR circuit and its application to inverter design based on the st...
Alternative Titles
Full title
Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_31750652
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_31750652
Other Identifiers
ISSN
0013-5194
E-ISSN
1350-911X
DOI
10.1049/el:20070039
