Investigation of NiOx-based contacts on p-GaN
Investigation of NiOx-based contacts on p-GaN
About this item
Full title
Author / Creator
Liday, J. , Hotový, I. , Sitter, H. , Vogrinčič, P. , Vincze, A. , Vávra, I. , Šatka, A. , Ecke, G. , Bonanni, A. , Breza, J. , Simbrunner, C. and Plochberger, B.
Publisher
Boston: Springer US
Journal title
Language
English
Formats
Publication information
Publisher
Boston: Springer US
Subjects
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Scope and Contents
Contents
In this study we investigated the effect of a NiO
x
layer on the electrical properties of oxidized Au/NiO
x
/p-GaN ohmic contacts. Au/NiO
x
layers with a small concentration of oxygen in NiO
x
were deposited on p-GaN by reactive DC magnetron sputtering and annealed in a mixture of O
2
+ N
2
, and in N
2
....
Alternative Titles
Full title
Investigation of NiOx-based contacts on p-GaN
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_35464561
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_35464561
Other Identifiers
ISSN
0957-4522
E-ISSN
1573-482X
DOI
10.1007/s10854-007-9520-1
