Growth and photosensitivity of p Si- n (GaSb)(1 - x)(Si(2)) (x) structures
Growth and photosensitivity of p Si- n (GaSb)(1 - x)(Si(2)) (x) structures
About this item
Full title
Growth and photosensitivity of p Si- n (GaSb)(1 - x)(Si(2)) (x) structures
Author / Creator
Journal title
Applied solar energy, 2007-09, Vol.43 (3), p.183-185
Language
English
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Scope and Contents
Contents
The possibility of growing a continuous solid solution of (GaSb)(1 - x) (Si(2)) (x) (x = 0-0.99) on single-crystalline silicon substrates by liquid-phase epitaxy from a tin solution melt is considered. The structural, volt-ampere, and spectral characteristics of the pSi-n(GaSb)(1 - x) (Si(2)) (x) structures are investigated.
Alternative Titles
Full title
Growth and photosensitivity of p Si- n (GaSb)(1 - x)(Si(2)) (x) structures
Authors, Artists and Contributors
Author / Creator
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Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_743686871
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_743686871
Other Identifiers
ISSN
0003-701X
DOI
10.3103/S0003701X07030140
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