Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
About this item
Full title
Author / Creator
Publisher
Washington, DC: American Association for the Advancement of Science
Journal title
Language
English
Formats
Publication information
Publisher
Washington, DC: American Association for the Advancement of Science
Subjects
More information
Scope and Contents
Contents
Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial sem...
Alternative Titles
Full title
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
Authors, Artists and Contributors
Author / Creator
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_proquest_miscellaneous_745899894
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_745899894
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.1183226
