Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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Publisher
United States: American Association for the Advancement of Science
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Language
English
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Publisher
United States: American Association for the Advancement of Science
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Contents
An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-lay...
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Full title
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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Record Identifier
TN_cdi_proquest_miscellaneous_954639314
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_proquest_miscellaneous_954639314
Other Identifiers
ISSN
0036-8075
E-ISSN
1095-9203
DOI
10.1126/science.1218461
