Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielect...
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric
About this item
Full title
Author / Creator
Xia, Pengkun , Feng, Xuewei , Ng, Rui Jie , Wang, Shijie , Chi, Dongzhi , Li, Cequn , He, Zhubing , Liu, Xinke and Ang, Kah-Wee
Publisher
England
Journal title
Language
English
Formats
Publication information
Publisher
England
More information
Scope and Contents
Contents
Two-dimensional layered semiconductors such as molybdenum disulfide (MoS
) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS
channel and gate dielectric is fundamentally important for enhancing the carrier transport propertie...
Alternative Titles
Full title
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS 2 and HfO 2 High-k Dielectric
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmed_primary_28084434
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_28084434
Other Identifiers
E-ISSN
2045-2322
DOI
10.1038/srep40669
