Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO 2 stack structure via work functio...
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO 2 stack structure via work function depth profiling
About this item
Full title
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO 2 stack structure via work function depth profiling
Author / Creator
Publisher
England
Journal title
Scientific reports, 2017-03, Vol.7, p.43561
Language
English
Formats
Publication information
Publisher
England
More information
Scope and Contents
Contents
We demonstrated that a flat band voltage (V
) shift could be controlled in TiN/(LaO or ZrO)/SiO
stack structures. The V
shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO
interface layer. The metal doping and silicate formation confirmed by using transmission electron mic...
Alternative Titles
Full title
Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO 2 stack structure via work function depth profiling
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmed_primary_28252013
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_28252013
Other Identifiers
E-ISSN
2045-2322
DOI
10.1038/srep43561
