Study on the piezoresistivity of Cr-doped V 2 O 3 thin film for MEMS sensor applications
Study on the piezoresistivity of Cr-doped V 2 O 3 thin film for MEMS sensor applications
About this item
Full title
Study on the piezoresistivity of Cr-doped V 2 O 3 thin film for MEMS sensor applications
Author / Creator
Publisher
England
Journal title
Microsystems & nanoengineering, 2024-12, Vol.10 (1), p.189
Language
English
Formats
Publication information
Publisher
England
More information
Scope and Contents
Contents
Cr-doped V
O
thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V
O
thin film an appealing piezoresistive material. To investigate the piezoresistivity of...
Alternative Titles
Full title
Study on the piezoresistivity of Cr-doped V 2 O 3 thin film for MEMS sensor applications
Authors, Artists and Contributors
Identifiers
Primary Identifiers
Record Identifier
TN_cdi_pubmed_primary_39672924
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmed_primary_39672924
Other Identifiers
E-ISSN
2055-7434
DOI
10.1038/s41378-024-00807-0
