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An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrys...

An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrys...

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_10934155

An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

About this item

Full title

An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

Publisher

Switzerland: MDPI AG

Journal title

Materials, 2024-02, Vol.17 (5), p.1077

Language

English

Formats

Publication information

Publisher

Switzerland: MDPI AG

More information

Scope and Contents

Contents

A physics-based model on polarization switching in ferroelectric polycrystalline films is proposed. The calculation results by the model agree well with experimental results regarding dynamic operations of ferroelectric-gate field-effect transistors (FeFETs). In the model, an angle
for each grain in the ferroelectric polycrystal is defined, wher...

Alternative Titles

Full title

An Extended Kolmogorov-Avrami-Ishibashi (EKAI) Model to Simulate Dynamic Characteristics of Polycrystalline-Ferroelectric-Gate Field-Effect Transistors

Authors, Artists and Contributors

Identifiers

Primary Identifiers

Record Identifier

TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_10934155

Permalink

https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_10934155

Other Identifiers

ISSN

1996-1944

E-ISSN

1996-1944

DOI

10.3390/ma17051077

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