Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment
Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment
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Publisher
New York: Springer New York
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Language
English
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New York: Springer New York
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Contents
Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH
3
plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using...
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Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3329401
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https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3329401
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ISSN
1556-276X,1931-7573
E-ISSN
1556-276X
DOI
10.1186/1556-276X-7-179