Non-volatile memory based on the ferroelectric photovoltaic effect
Non-volatile memory based on the ferroelectric photovoltaic effect
About this item
Full title
Author / Creator
Guo, Rui , You, Lu , Zhou, Yang , Shiuh Lim, Zhi , Zou, Xi , Chen, Lang , Ramesh, R. and Wang, Junling
Publisher
London: Nature Publishing Group UK
Journal title
Language
English
Formats
Publication information
Publisher
London: Nature Publishing Group UK
Subjects
More information
Scope and Contents
Contents
The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms e...
Alternative Titles
Full title
Non-volatile memory based on the ferroelectric photovoltaic effect
Authors, Artists and Contributors
Author / Creator
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Primary Identifiers
Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3709492
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3709492
Other Identifiers
ISSN
2041-1723
E-ISSN
2041-1723
DOI
10.1038/ncomms2990
