Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions
Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous,
h-
BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on gra...
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Full title
Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4507443
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4507443
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ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep12238
