Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap M...
Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
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Publisher
London: Nature Publishing Group UK
Journal title
Language
English
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Publication information
Publisher
London: Nature Publishing Group UK
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Contents
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content Mg
x
Zn
1–x
O for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg
0.51
Zn
0.49
O active components, which has been reliably achi...
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Full title
Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
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Record Identifier
TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4614808
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4614808
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep15516
