Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
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Publisher
London: Nature Publishing Group UK
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Language
English
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Publisher
London: Nature Publishing Group UK
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Contents
A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous
p
- and
n
-type doping with high carrier densities. Here we use ion imp...
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Full title
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
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TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4901323
Permalink
https://devfeature-collection.sl.nsw.gov.au/record/TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_4901323
Other Identifiers
ISSN
2045-2322
E-ISSN
2045-2322
DOI
10.1038/srep27643
